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Same model may have multiple batches, images only for reference.
BSC12DN20NS3G Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

BSC12DN20NS3G

Part No BSC12DN20NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSC12DN20NS3G Infineon Technologies MOSFETs N-Ch 200V 11.3A TDSON-8 OptiMOS 3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
REACH - SVHC Details
Technology Si
Mounting Style SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 11.3 A
Rds On - Drain-Source Resistance 108 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 8.7 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W
Channel Mode Enhancement
Tradename OptiMOS
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 3 ns
Forward Transconductance - Min 6 S
Product Type MOSFETs
Rise Time 4 ns
Series OptiMOS 3
Factory Pack Quantity Factory Pack Quantity 5000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 6 ns
Part # Aliases SP000781774 BSC12DN20NS3GATMA1
Unit Weight 0.004375 oz
Ultra Librarian 3D Model Ultra Librarian BSC12DN20NS3G CAD Model

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50+ $1.0187 $50.9350
120+ $0.8359 $100.3080
190+ $0.8098 $153.8620
260+ $0.7836 $203.7360
335+ $0.7575 $253.7625
445+ $0.6792 $302.2440
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