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SIR428DP-T1-E3

Part No SIR428DP-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190232-SIR428DP-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR428DP-T1-E3 CAD Model

Description

The SIR428DP-T1-E3 is a Power MOSFET from Vishay Siliconix, designed for efficient power switching applications. It is an n-channel device housed in a PowerPAK SO-8 single package, optimized for low on-resistance and fast switching speeds. This MOSFET is part of Vishay's broad portfolio of power management solutions, offering a balance of performance and reliability.

Applications:

  • Synchronous Rectification
  • DC-DC Converters
  • Power Management in Portable Devices
  • Load Switching
  • Motor Control

Features:

  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Minimizes switching losses at higher frequencies.
  • Logic Level Gate Drive: Allows direct drive from microcontrollers and other logic devices.
  • TrenchFET® Power MOSFET Technology: Provides high cell density for low on-resistance.
  • PowerPAK® SO-8 Package: Compact footprint with excellent thermal performance.
  • RoHS Compliant: Environmentally friendly.

Benefits:

  • Increased System Efficiency: Low on-resistance and fast switching minimize power losses.
  • Compact Design: Small footprint allows for high-density designs.
  • Simplified Gate Drive: Logic level gate drive simplifies circuit design and reduces component count.
  • Improved Thermal Performance: PowerPAK SO-8 package efficiently dissipates heat.
  • Enhanced Reliability: Robust design ensures stable operation in demanding applications.

Additional Details:

The SIR428DP-T1-E3 features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 16A (depending on mounting and thermal conditions). The on-resistance (RDS(on)) is typically very low, which minimizes power dissipation and improves efficiency. The gate threshold voltage (VGS(th)) is designed for logic-level compatibility, typically between 1V and 3V. The PowerPAK SO-8 package offers excellent thermal characteristics, enabling efficient heat dissipation and high power density. It is surface mountable, allowing for automated assembly and compact board layouts. This MOSFET is suitable for a wide range of applications requiring efficient and reliable power switching. The operating temperature range is typically -55°C to +150°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,975 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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