The Vishay TrenchFET SiR406DP is a N-channel MOSFET transistor with a maximum drain-source voltage of 25V and a continuous drain current of 40A @ 25°C.

• Manufacturer: Vishay
• Type: N-channel MOSFET
• Drain-Source Voltage (Maximum): 25V
• Continuous Drain Current: 40A @ 25°C
• Rds On (Maximum) @ Id, Vgs: 3.8 mOhm @ 15A, 10V
• Gate-Source Voltage (th) (Maximum) @ Id: 2.4V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 2083pF @ 10V
• Package: PowerPAK SO-8
• Power Dissipation (Maximum): 5W (Ta), 48W (Tc)
• Status: Obsolete (EOL)
• Estimated EOL Date: June 21, 2009
• Alternative Parts: DMT2004UPS-13, RJK0210DPA-00#J53, and BSC048N025S G