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Same model may have multiple batches, images only for reference.
SIHF9520S-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHF9520S-GE3

Part No SIHF9520S-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 6.8A D2PAK / P-Channel 100 V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
SIHF9520S-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF9520
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1093042-SIHF9520S-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF9520S-GE3 CAD Model

Description

The Vishay Siliconix SIHF9520S-GE3 is a P-channel MOSFET transistor used in discrete semiconductor products.

  • Manufacturer: Vishay Siliconix
  • Category: Discrete Semiconductor Products
  • Channel Type: P-channel
  • Drain to Source Voltage: 100V
  • Continuous Drain Current: 6.8A
  • Maximum Rds On: 600mOhm @ 4.1A and 10V
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK (TO-263)
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
  • Temperature Range: -55°C to 175°C (TJ)

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