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Same model may have multiple batches, images only for reference.
SIA533EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA533EDJ-T1-GE3

Part No SIA533EDJ-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET N/P-CH 12V 4.5A SC70-6
Datasheet
SIA533EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 34mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 6V
Power - Max 7.8W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA533
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 749225-SIA533EDJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA533EDJ-T1-GE3 CAD Model

Description

The SIA533EDJ-T1-GE3 is a MOSFET array from Vishay.

  • Series: TrenchFET®
  • Package: PowerPAK® SC-70-6 Dual
  • Mounting: surface mount applications
  • Standard Package: 3,000 pcs
  • Gate: logic level gate
  • Drain to source voltage rating: 12V
  • Continuous drain current: 4.5A
  • On-resistance: 34mOhm @ 4.6A and 4.5V
  • Gate threshold voltage: 1V @ 250µA
  • Maximum power rating: 7.8W
  • Temperature range: -55°C to 150°C
  • Status: active product

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5199 $51.9900
235+ $0.4266 $100.2510
365+ $0.4132 $150.8180
505+ $0.3999 $201.9495
650+ $0.3866 $251.2900
870+ $0.3466 $301.5420
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Availability: 24,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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