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Same model may have multiple batches, images only for reference.
SI7960DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7960DP-T1-GE3

Part No SI7960DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6.2A
Rds On (Max) @ Id, Vgs 21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Power - Max 1.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SI7960
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666875-SI7960DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7960DP-T1-GE3 CAD Model

Description

The SI7960DP-T1-GE3 is a dual N-channel MOSFET transistor from Vishay's TrenchFET series.

  • Category: discrete semiconductor products, specifically in FET and MOSFET arrays
  • Gate Type: logic level gate
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 6.2A @ 25°C
  • Maximum On-Resistance (Rds On): 21mOhm @ a drain current (Id) of 9.7A and gate-source voltage (Vgs) of 10V
  • Package: PowerPAK SO-8 Dual
  • Gate Charge (Qg): 75nC @ 10V
  • Operating Temperature Range: -55°C to 150°C

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