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SI7342DP-T1-E3

Part No SI7342DP-T1-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay-Siliconix
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 8.25 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Gate Charge (Qg) @ Vgs 19nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1900pF @ 15V
Power - Max 1.8W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package PowerPAK SO-8
Manufacturer Device Package PowerPAK SO-8
Win Source Part Number 190082-SI7342DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7342DP-T1-E3 CAD Model

Description

The Vishay-Siliconix SI7342DP-T1-E3 is a MOSFET N-Channel, Metal Oxide transistor that belongs to the Transistors - FETs, MOSFETs - Single family of electronic components.

  • Function: MOSFET N-Channel
  • Technology: Metal Oxide Transistor

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,113 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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