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IRF530STRL

Part No IRF530STRL
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 100V 14A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 160mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 670pF at 25V
Power Dissipation (Maximum) 3.7W, 88W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 800
MSL Level 1 (Unlimited)
Win Source Part Number 753726-IRF530STRL
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF530STRL CAD Model

Description

The Vishay Siliconix IRF530STRL is an N-channel MOSFET that is ideal for use in a range of electronic applications. It has a maximum drain-source breakdown voltage of 100V and a continuous drain current of 14A.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A
  • On-Resistance: 160mOhm @ 8.4A, 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2219 $57.9942
44+ $2.6437 $116.3228
68+ $2.5610 $174.1480
94+ $2.4784 $232.9696
121+ $2.3959 $289.9039
162+ $2.1480 $347.9760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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