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SI6926DQ-T1

Part No SI6926DQ-T1
Manufacturer Vishay
Catalog FETs - Arrays
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Arrays
Win Source Part Number 190058-SI6926DQ-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6926DQ-T1 CAD Model

Description

The SI6926DQ-T1 is a dual N-Channel MOSFET from Vishay, intended for a variety of power management and switching applications. This device integrates two independent N-Channel MOSFETs into a single package, making it ideal for space-constrained applications requiring efficient power usage. With low on-resistance and fast switching characteristics, it offers efficient performance in DC-DC converters, load switching, and other power management circuits.

Applications:

  • DC-DC Converters: Used in circuits for efficient voltage regulation and power conversion.
  • Load Switching: Controls the power delivered to various loads in electronic circuits.
  • Power Management: Employed in distribution and control circuits to manage power effectively.
  • Battery Management Systems (BMS): Used to control charging and discharging batteries.
  • Motor Control: Used to control the speed and direction of small DC motors.

Features:

  • Dual N-Channel MOSFET: Contains two independent N-Channel MOSFETs in a single package.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, increasing efficiency.
  • Logic-Level Gate Drive: Simplifies interfacing with low-voltage logic circuits.
  • Compact Package: Saves board space, enabling smaller designs.
  • Fast Switching Speed: Reduces switching losses, improving efficiency.

Benefits:

  • Increased Power Efficiency: Lower RDS(on) reduces power dissipation for cooler operation.
  • Simplified Circuit Design: Logic-level gate drive simplifies interfacing with logic components.
  • Reduced Board Space: Integration of two MOSFETs reduces component count.
  • Enhanced Thermal Performance: Efficient heat dissipation supports stable operation.
  • Improved System Reliability: Robust design ensures dependable performance.

Additional Details:

The SI6926DQ-T1 features low gate charge (Qg) and gate resistance (Rg), which minimize switching losses. It operates over a wide range of temperatures and is available in a surface-mount package for automated assembly and lower manufacturing costs. Refer to the product datasheet for detailed information on voltage ratings, current capacity, RDS(on) values, and other specific parameters.

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