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Si4500BDY-T1-GE3

Part No Si4500BDY-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V 6.6A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Rds On (Max) @ Id, Vgs 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4500
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1137336-SI4500BDY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian Si4500BDY-T1-GE3 CAD Model

Description

The Vishay 1137336-SI4500BDY-T1-GE3 is a FET, MOSFET array belonging to the Discrete Semiconductor Products category.

  • Type: Logic Level Gate MOSFET
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id) @ 25°C: 6.6A and 3.8A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
  • Power Rating: 1.3W
  • Operating Temperature Range: -40°C to 150°C
  • Mounting Type: Surface Mount
  • Package: 8-SOIC
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9128 $66.9480
75+ $1.5696 $117.7200
115+ $1.5204 $174.8460
160+ $1.4715 $235.4400
205+ $1.4224 $291.5920
275+ $1.2753 $350.7075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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