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SI5517DU-T1-GE3

Part No SI5517DU-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V 6A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
Power - Max 8.3W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® ChipFET™ Dual
Supplier Device Package PowerPAK® ChipFet Dual
Base Product Number SI5517
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666636-SI5517DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5517DU-T1-GE3 CAD Model

Description

The SI5517DU-T1-GE3 is a MOSFET transistor from Vishay's TrenchFET series.

  • Type: Logic level gate MOSFET
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Maximum On-Resistance (Rds On): 39mOhm @ 4.4A and 4.5V gate-source voltage (Vgs)
  • Power Rating: 8.3W
  • Channel Configuration: N and P-channel
  • Package: PowerPAK ChipFET Dual
  • Mounting Type: Surface mountable
  • Gate Charge (Qg): 16nC @ 8V
  • Input Capacitance (Ciss): 520pF @ 10V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9217 $57.6510
65+ $1.5768 $102.4920
100+ $1.5276 $152.7600
140+ $1.4783 $206.9620
175+ $1.4290 $250.0750
235+ $1.2812 $301.0820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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