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Same model may have multiple batches, images only for reference.
SI1029X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1029X-T1-E3

Part No SI1029X-T1-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description Trans MOSFET N/P-CH 60V 0.305A 6-Pin SC-89 T/R / Complementary N- and P-Channel 60-V (D-S) MOSFET | MOSFET N/P-CH 60V SOT563F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 305mA, 190mA
Rds On (Maximum) at Id, Vgs 1.4Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 0.75nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 30pF at 25V
Maximum Power 250mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-563, SOT-666
Supplier Device Package SC-89-6
Family Part Number SI1029
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 734331-SI1029X-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si1029X
Introduction Date April 18, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI1029X-T1-E3 CAD Model

Description

The Vishay Siliconix SI1029X-T1-E3 is an N and P-channel transistor that features a logic level gate.

  • Designed for: Discrete Semiconductor Products
  • Popularity: High
  • Manufacturer: Vishay Siliconix
  • Introduction Date: April 18, 2001
  • Status: Obsolete
  • Estimated EOL Date: Obsolete/End of Life
  • Maximum Power: 250mW
  • Vds - Drain-Source Breakdown Voltage: 60V

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