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Same model may have multiple batches, images only for reference.
G2R120MT33J GeneSiC Semiconductor
Same model may have multiple batches, images only for reference.

G2R120MT33J

Part No G2R120MT33J
Manufacturer GeneSiC Semiconductor
Catalog FETs - Single
Description SIC MOSFET N-CH TO263-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202143-G2R120MT33J
Manufacturer GeneSiC Semiconductor
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series G2R™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 3300 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Ultra Librarian 3D Model Ultra Librarian G2R120MT33J CAD Model

Description

Introducing the GeneSiC Semiconductor 1202143, a high-performance N-Channel SiCFET (Silicon Carbide) transistor.

  • Series: G2R™
  • Drain to Source Voltage: 3300V
  • Package: TO-263-7
  • Mounting: Surface Mount
  • Operating Temperature: -55°C to 175°C
  • Status: Active

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