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Same model may have multiple batches, images only for reference.
IRF7754 Real Image
Same model may have multiple batches, images only for reference.

IRF7754

Part No IRF7754
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Power MOSFET(Vdss=-12V) | MOSFET 2P-CH 12V 5.5A 8-TSSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 5.5A
Rds On (Maximum) at Id, Vgs 25mOhm at 5.4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1984pF at 6V
Maximum Power 1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-TSSOP
Supplier Device Package 8-TSSOP
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187346-IRF7754
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7754 CAD Model

Description

The 1187346-IRF7754 from Infineon Technologies is a P-channel MOSFET transistor with a drain-source breakdown voltage of 12V and a continuous drain current of 5.5A. It features a logic level gate and a maximum gate-source voltage of 900mV @ 250μA.

  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 5.5A
  • Gate Type: Logic Level
  • Gate-Source Voltage (Max): 900mV @ 250μA
  • Power (Max): 1W
  • On-Resistance (Max): 25mOhm @ 5.4A and 4.5V
  • Input Capacitance: 1984pF @ 6V
  • Gate Charge: 22nC @ 4.5V
  • Package: 8-TSSOP

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