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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 4A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 800mOhm at 2.4A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 10V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188554-IRLI620GPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLI620GPBF CAD Model

Description

This electronic component is manufactured by Vishay Siliconix and has a win source part number of 1188554-IRLI620GPBF.

  • Packaging: Tube
  • Mounting Style: Through Hole
  • Technology: MOSFET
  • Transistor Polarity: N-Channel
  • Supplier Device Package: TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Status: Obsolete
  • Temperature Range: -55°C ~ 150°C
  • Manufacturer Homepage: www.irf.com
  • Manufacturer Package: TO-220-3 Full Pack, Isolated Tab
  • Power Dissipation (Maximum): 30W
  • Popularity: Medium
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 4A
  • Rds On (Maximum) @ Id, Vgs: 800mOhm @ 2.4A, 5V
  • Gate Source Voltage(th) (Maximum) @ Id: 2V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V
  • Gate Source Voltage (Maximum): ±10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 360pF @ 25V

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