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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Maximum) at Id, Vgs 400mOhm at 5.4A, 5V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 40nC at 10V
Gate Source Voltage (Maximum) ±10V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188519-IRL630
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL630 CAD Model

Description

The IRL630 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: With a drain-source breakdown voltage of 200V and a continuous drain current of 9A, this MOSFET can handle high power dissipation of up to 74W.
  • Gate-Source Threshold Voltage: It has a gate-source threshold voltage of 2V and a maximum gate charge of 40nC @ 10V.
  • Features: The IRL630 is a reliable and durable component that comes in a TO-220AB package and can be mounted using through-hole technology.
  • Benefit: It is an ideal component for use in applications that require high power and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0944 $54.7200
115+ $0.8980 $103.2700
175+ $0.8699 $152.2325
240+ $0.8419 $202.0560
310+ $0.8138 $252.2780
415+ $0.7296 $302.7840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 5,000 pieces
MOQ: 50 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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