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Same model may have multiple batches, images only for reference.
IRFZ24 Real Image
Same model may have multiple batches, images only for reference.

IRFZ24

Part No IRFZ24
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 60V 17A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 100mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 640pF at 25V
Power Dissipation (Maximum) 60W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188163-IRFZ24
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ24 CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay Siliconix.

  • Packaging: tube
  • Mounting: through a hole
  • Transistor Polarity: N-channel
  • Drive Voltage: 10V
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 1,000
  • MSL Level: 1
  • Vds - Drain-Source Breakdown Voltage: 60V
  • Id - Continuous Drain Current: 17A
  • Rds On (Maximum) @ Id, Vgs: 100mOhm @ 10A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 640pF @ 25V

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