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IRFU224PBF

Part No IRFU224PBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 250V 3.8A I-PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 3.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 2.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-251AA
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1188074-IRFU224PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFU224PBF CAD Model

Description

The IRFU224PBF is an N-channel MOSFET with a drain-source breakdown voltage of 250V and a continuous drain current of 3.8A.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 3.8A
  • Maximum Rds On: 1.1 Ohm @ 2.3A and 10V
  • Gate Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 14nC @ 10V
  • Gate Source Voltage (maximum): ±20V
  • Package: TO-251AA
  • Mounting: Through hole
  • Power Dissipation (maximum): 2.5W and 42W
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,700 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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