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Same model may have multiple batches, images only for reference.
IRFI734G Real Image
Same model may have multiple batches, images only for reference.

IRFI734G

Part No IRFI734G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A) | MOSFET N-CH 450V 3.4A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 450V
Id - Continuous Drain Current 3.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 45nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 680pF at 25V
Power Dissipation (Maximum) 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187660-IRFI734G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI734G CAD Model

Description

The Vishay Siliconix IRFI734G is an obsolete N-channel MOSFET transistor that comes in a TO-220-3 package with isolated tab.

  • Drain-Source Breakdown Voltage: 450V
  • Continuous Drain Current: 3.4A
  • On-Resistance: 1.2Ohm @ 2A, 10V gate-source voltage
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 45nC @ 10V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 35W
  • ECCN: EAR99 compliant
  • Manufacturer Pack Quantity: 50

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