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IRF820L

Part No IRF820L
Manufacturer Vishay
Catalog FETs - Single
Description Dynamic dV/dt rating | MOSFET N-CH 500V 2.5A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 2.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 25V
Power Dissipation (Maximum) 3.1W, 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187390-IRF820L
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF820L CAD Model

Description

The IRF820L is an N-Channel MOSFET that has a drain-source breakdown voltage of 500V and a continuous drain current of 2.5A manufactured by Vishay.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 2.5A
  • Package: I2PAK
  • Maximum Power Dissipation: 3.1W and 50W
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 360pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 24nC @ 10V
  • Drive Voltage: 10V
  • Drain-Source Resistance: 3Ohm @ 1.5A, 10V
  • Supply and demand status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,201 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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