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SUB15P01-52

Part No SUB15P01-52
Manufacturer Vishay
Catalog FETs - Single
Description P-Channel 8-V (D-S), 175C MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194869-SUB15P01-52
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SUB15P01-52 CAD Model

Description

The SUB15P01-52 is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This transistor is designed for switching and amplification applications, particularly where a P-channel device offers advantages in circuit design. The '-52' likely indicates a specific production batch or variant with slightly altered characteristics.

Applications

  • Load Switching: Used to control power to various loads in electronic circuits.
  • Power Management: Employed in power supplies and DC-DC converters for switching and regulation.
  • Motor Control: Can be used in low-power motor control circuits.
  • Battery Management Systems: Used for switching and protection in battery-powered devices.

Features

  • P-Channel MOSFET: Allows for easier high-side switching in some applications.
  • Low On-Resistance (RDS(on)): Minimizes power loss during switching, improving efficiency.
  • Fast Switching Speed: Enables efficient switching operation in various applications.
  • Surface Mount Package: Designed for automated assembly on printed circuit boards (PCBs).
  • Lead-Free Construction: Compliant with RoHS environmental standards.

Benefits

  • High Efficiency: Low RDS(on) minimizes power dissipation, resulting in higher efficiency.
  • Simplified Circuit Design: P-Channel configuration simplifies certain circuit topologies.
  • Compact Size: Surface mount package allows for high-density circuit designs.
  • Reliable Operation: Robust design ensures reliable performance in demanding applications.
  • Environmentally Friendly: Lead-free construction minimizes environmental impact.

Additional Details

The SUB15P01-52 is typically characterized by its drain-source voltage rating (VDS), gate-source voltage rating (VGS), continuous drain current (ID), and pulsed drain current (IDM). These parameters are crucial for determining the suitability of the MOSFET for a specific application. The device also has a defined gate threshold voltage (VGS(th)), which is the voltage required to turn the MOSFET on. The datasheet provides detailed information about the device's thermal characteristics, including its thermal resistance from junction to ambient and junction to case, which is important for heat management. Proper PCB layout and heat sinking may be necessary to ensure the MOSFET operates within its safe operating area. It's crucial to consult the datasheet for precise electrical characteristics and application guidelines.

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