The Vishay Siliconix MOSFET is a P-Channel transistor with a drain-source breakdown voltage of 400V and a continuous drain current of 1.8A. This electronic component is made by Vishay Siliconix.

• Rds On: 7Ohm @ 1.1A, 10V
• Gate charge (Qg): 13nC @ 10V
• Gate-source voltage (Maximum): ±20V
• Input capacitance (Ciss) (Maximum): 270pF @ 25V
• Package: D-Pak with TO-252-3, DPak (2 Leads + Tab), SC-63 manufacturer package
• Designed for: discrete semiconductor products
• Power dissipation (maximum): 50W
• Supply and demand status: balanced
• Pack: 2,000 units