IRFR110TR Real Image
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 4.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 540mOhm at 2.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.3nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 180pF at 25V
Power Dissipation (Maximum) 2.5W, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187857-IRFR110TR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR110TR CAD Model

Description

The IRFR110TR MOSFET from Vishay Siliconix is an N-channel transistor.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 4.3A
  • On-Resistance: 540mOhm @ 2.6A and 10V
  • Gate-Source Voltage: 4V @ 250μA
  • Gate Charge: 8.3nC @ 10V
  • Input Capacitance: 180pF @ 25V
  • Package: TO-252-3, DPak
  • Mounting: SMD technology
  • Status: obsolete
  • Supply and demand status: sufficient
  • Power Dissipation: 2.5W and 25W
  • Packaging: tape and reel, 2000 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2394 $50.2740
450+ $0.2243 $100.9350
695+ $0.2167 $150.6065
995+ $0.2016 $200.5920
1,290+ $0.1940 $250.2600
1,610+ $0.1864 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 12,120 pieces
MOQ: 210 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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