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IRF3711ZL

Part No IRF3711ZL
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 20V 92A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 92A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 24nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2150pF at 10V
Power Dissipation (Maximum) 79W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186998-IRF3711ZL
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711ZL CAD Model

Description

The Infineon Technologies electronic component is a medium-popularity product that has a balanced supply and demand.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1186998-IRF3711ZL
  • Packaging: tube
  • Mounting: through-hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Category: Discrete Semiconductor Products
  • Supplier Device Package: TO-262
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation (Maximum): 79W
  • Manufacturer Homepage: www.irf.com
  • Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Vds - Drain-Source Breakdown Voltage: 20V
  • Id - Continuous Drain Current: 92A
  • Rds On (Maximum) @ Id, Vgs: 6mOhm @ 15A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 2.45V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 24nC @ 4.5V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2150pF @ 10V

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