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Same model may have multiple batches, images only for reference.
IRFPC50LCPBF Real Image
Same model may have multiple batches, images only for reference.

IRFPC50LCPBF

Part No IRFPC50LCPBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 600V 11A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 600mOhm at 6.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2300pF at 25V
Power Dissipation (Maximum) 190W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1187818-IRFPC50LCPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPC50LCPBF CAD Model

Description

The Vishay Siliconix 1187818-IRFPC50LCPBF is an N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 11A.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A
  • Maximum Rds On: 600mOhm @ 6.6A and 10V
  • Gate-Source Voltage(th): 4V @ 250μA
  • Mounting Type: through hole
  • Package: TO-247-3
  • Power Dissipation: 190W
  • Gate Charge: 84nC @ 10V
  • Popularity: medium popularity item with a balance of supply and demand
  • Open Market: in the open market

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