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Same model may have multiple batches, images only for reference.
IRFBC20 Real Image
Same model may have multiple batches, images only for reference.

IRFBC20

Part No IRFBC20
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) | MOSFET N-CH 600V 2.2A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 2.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 4.4Ohm at 1.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 25V
Power Dissipation (Maximum) 50W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187522-IRFBC20
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC20 CAD Model

Description

The IRFBC20 is an N-channel MOSFET manufactured by Vishay Siliconix.

  • Supply and Demand Status: Balanced
  • Channel Type: N-channel
  • Application: Designed for use in electronic circuits as a switch or amplifier
  • Drain-Source Breakdown Voltage: 600V (maximum)
  • Continuous Drain Current: 2.2A
  • Quality: Reliable and efficient device
  • Function: Helps to ensure the proper functioning of electronic systems

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Quantity Unit Price Ext. Price
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225+ $0.5232 $117.7200
345+ $0.5059 $174.5355
475+ $0.4897 $232.6075
610+ $0.4736 $288.8960
820+ $0.4250 $348.5000
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Availability: 19,500 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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