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IRFL210PBF

Part No IRFL210PBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 200V 0.96A SOT223
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 960mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.5Ohm at 580mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.2nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 140pF at 25V
Power Dissipation (Maximum) 2W, 3.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187723-IRFL210PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL210PBF CAD Model

Description

The MOSFET is a discrete semiconductor product that is designed for use in various electronic applications.

  • Transistor Polarity: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Package: SOT-223
  • Manufacturer Package: TO-261-4, TO-261AA
  • Power Dissipation (Maximum): 2W, 3.1W
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Supply and Demand: Balanced
  • Manufacturer Pack Quantity: 4,000 Components
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2771 $51.2635
440+ $0.2274 $100.0560
685+ $0.2203 $150.9055
940+ $0.2132 $200.4080
1,215+ $0.2061 $250.4115
1,625+ $0.1848 $300.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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