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IRFI9Z14G

Part No IRFI9Z14G
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET-R POWER MOSFET | MOSFET P-CH 60V 5.3A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 5.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 500mOhm at 3.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 270pF at 25V
Power Dissipation (Maximum) 27W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187680-IRFI9Z14G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFI9Z14G CAD Model

Description

The Vishay Siliconix IRFI9Z14G is a P-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 5.3A.

  • Manufacturer: Vishay Siliconix
  • Channel Type: P-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 5.3A
  • Maximum Power Dissipation: 27W
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220-3 full pack with an isolated tab
  • Mounting: Through hole
  • Operating Temperature Range: -55°C to 175°C
  • Drive Voltage: 10V
  • Status: Obsolete
  • Popularity: Medium
  • Percentage: 34 pct

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