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Same model may have multiple batches, images only for reference.
IRFI9610G Real Image
Same model may have multiple batches, images only for reference.

IRFI9610G

Part No IRFI9610G
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET POWER MOSFET | MOSFET P-CH 200V 2A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 1.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 180pF at 25V
Power Dissipation (Maximum) 27W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187674-IRFI9610G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI9610G CAD Model

Description

The Vishay Siliconix IRFI9610G is a P-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage (Maximum): 200V
  • Continuous Drain Current: 2A
  • On-Resistance (Maximum): 3Ohm @ 1.2A, 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 13nC @ 10V
  • Input Capacitance: 180pF @ 25V
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Power Dissipation (Maximum): 27W

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7903 $62.6605
80+ $1.4692 $117.5360
125+ $1.4230 $177.8750
170+ $1.3779 $234.2430
220+ $1.3317 $292.9740
295+ $1.1943 $352.3185
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Availability: 3,450 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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