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Same model may have multiple batches, images only for reference.
IRFBE30S Real Image
Same model may have multiple batches, images only for reference.

IRFBE30S

Part No IRFBE30S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 800V 4.1A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 4.1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3Ohm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187545-IRFBE30S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBE30S CAD Model

Description

The IRFBE30S is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Package: D2PAK
  • Number of Leads: 2 + Tab
  • Applications: Power Supplies, Motor Control Circuits, DC-DC Converters
  • Status: Obsolete
  • Supply and Demand: Limited
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 125W
  • Vds: 800V
  • Id: 4.1A
  • Rds On: 3Ohm @ 2.5A, 10V

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