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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 3.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.2Ohm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 25V
Power Dissipation (Maximum) 3.1W, 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187532-IRFBC30L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC30L CAD Model

Description

The IRFBC30L is an obsolete N-channel MOSFET manufactured by Vishay Siliconix.

  • Product Status: Obsolete
  • Mounting Style: Through-hole
  • Technology: MOSFET
  • Transistor Polarity: N-channel
  • Suitable For: Discrete semiconductor products
  • Device Package: I2PAK
  • Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Power Dissipation (Max): 3.1W and 74W
  • Vds: 600V
  • Id: 3.6A
  • Rds On (Maximum) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 660pF @ 25V

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