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Same model may have multiple batches, images only for reference.
IRFB13N50A Real Image
Same model may have multiple batches, images only for reference.

IRFB13N50A

Part No IRFB13N50A
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A) | MOSFET N-CH 500V 14A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 8.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 81nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1910pF at 25V
Power Dissipation (Maximum) 250W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187485-IRFB13N50A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB13N50A CAD Model

Description

The Vishay IRFB13N50A MOSFET is a high-power electronic component with a maximum power dissipation of 250W.

  • Vds: 500V
  • Continuous Drain Current: 14A
  • Rds On (Max): 450mOhm @ 8.4A and 10V
  • Gate Source Voltage (th): 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 81nC @ 10V
  • Mounting Type: Through-hole
  • Package/Case: TO-220-3
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Vishay Siliconix

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