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MTB75N06T4

Part No MTB75N06T4
Manufacturer ON Semiconductor
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer ON Semiconductor
Win Source Part Number 330557-MTB75N06T4
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MTB75N06T4 CAD Model

Description

The MTB75N06T4 is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading figure in the field of energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of power regulation applications, offering a combination of low on-resistance and high switching performance.

Key Features

  • Advanced Technology: Utilizes ON Semiconductor's latest trench technology to ensure superior performance and reliability.
  • High Current Capability: With a continuous drain current (ID) of 75A, the MTB75N06T4 is capable of handling high current loads efficiently.
  • Low On-Resistance: Features a low RDS(on) of 6.2 mOhm (typical) at VGS = 10V, reducing power loss and enhancing efficiency.
  • High Switching Performance: Fast switching speeds make this MOSFET ideal for high-frequency applications, minimizing switching losses.
  • Robust Thermal Management: The device is encapsulated in a D2PAK package, known for excellent thermal characteristics, ensuring stable operation under varying conditions.
  • High Energy Efficiency: Optimized for low conduction and switching losses, the MTB75N06T4 is an excellent choice for power-sensitive designs.

Applications

The MTB75N06T4 is suitable for a wide range of applications, including:

  • Power Supply Regulation
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Switching Regulators

Technical Specifications

Parameter Value Drain-to-Source Voltage (VDSS) 60V Continuous Drain Current (ID) 75A RDS(on) 6.2 mOhm Package D2PAK

With its robust design and cutting-edge technology, the MTB75N06T4 from ON Semiconductor is an ideal choice for engineers looking to improve the efficiency and reliability of their power management systems.

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