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Manufacturer Vishay Siliconix
Packaging Tube
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 2.6A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 3.1W , 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803962-IRF624S
Ultra Librarian 3D Model Ultra Librarian IRF624S CAD Model

Description

The 803962-IRF624S is a MOSFET (Metal Oxide) N-channel FET from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 250V
  • Power Dissipation (Maximum): 3.1W, 50W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Temperature Range: -55°C ~ 150°C
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Status: Obsolete (end of life)
  • Popularity: Medium
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)
  • Rds On (maximum) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
  • Gate Charge (Qg) (maximum) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 260pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Vgs(th) (maximum) @ Id: 4V @ 250μA
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3285 $50.9175
375+ $0.2695 $101.0625
575+ $0.2611 $150.1325
795+ $0.2527 $200.8965
1,025+ $0.2443 $250.4075
1,370+ $0.2190 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 12,000 pieces
MOQ: 155 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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