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Same model may have multiple batches, images only for reference.
IRF510S Real Image
Same model may have multiple batches, images only for reference.

IRF510S

Part No IRF510S
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A) | MOSFET N-CH 100V 5.6A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 5.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 540mOhm at 3.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 8.3nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 180pF at 25V
Power Dissipation (Maximum) 3.7W, 43W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187023-IRF510S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF510S CAD Model

Description

The Vishay Siliconix IRF510S is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 5.6A.

  • Maximum On-Resistance: 540mOhm @ 3.4A and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 180pF @ 25V drain-source voltage
  • Package: D2PAK with 2 leads and a tab
  • Power Dissipation: 3.7W and 43W maximum
  • Supply and Demand Status: balanced
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)

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Quantity Unit Price Ext. Price
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420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
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