The UTT12P10L-TN3-R is a P-Channel enhancement mode power MOSFET from Unisonic Technologies Co., Ltd. (UTC). It's designed for a variety of power management and switching applications, providing efficient performance and reliability.

Applications:

• Load Switching
• Power Management in Portable Devices
• DC-DC Converters
• Battery Protection

Features:

• Low RDS(ON) for minimal conduction losses.
• Fast switching speed.
• Low gate charge (Qg).
• Lead-free finish and RoHS compliant.

Benefits:

• Improved power efficiency in various applications.
• Reduced switching losses and improved system response due to fast switching speed.
• Simplified design and reduced gate drive requirements due to low gate charge.
• Environmentally friendly due to lead-free and RoHS compliant design.

Technical Specifications:

The UTT12P10L-TN3-R features a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of -12A. The RDS(ON) is 0.21Ω at VGS = -10V. The gate-source voltage (VGS) is ±20V. It is available in a TO-252 package. The operating junction temperature ranges from -55°C to +150°C.