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UTT108N03L-TA3-T

Part No UTT108N03L-TA3-T
Manufacturer UTC
Catalog Electronic Wholesale
Description 30V, 108A N-CHANNEL POWER MOSFET
Sample
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Manufacturer UTC
Win Source Part Number 1278681-UTT108N03L-TA3-T
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UTT108N03L-TA3-T CAD Model

Description

The UTT108N03L-TA3-T is an N-channel power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for low-voltage, high-current switching applications, such as DC-DC converters, load switching, and power management circuits. This MOSFET is known for its low on-resistance and fast switching speed, which contribute to high efficiency and reduced power losses.

Applications

  • DC-DC Converters: Voltage conversion in power supplies and battery chargers.
  • Load Switching: Controlling power to various loads in electronic systems.
  • Power Management: Regulating power distribution in portable devices and industrial equipment.
  • Motor Control: Driving small motors in consumer electronics and robotics.
  • Backlight Inverters: Powering LED backlights in displays.

Features

  • N-Channel MOSFET: Standard N-channel configuration for easy integration.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • Fast Switching Speed: Reduces switching losses and improves efficiency.
  • Low Gate Charge (Qg): Requires less energy to switch the MOSFET.
  • Surface Mount Package: Compact package for space-saving designs.

Benefits

  • High Efficiency: Reduces power losses and improves overall system efficiency.
  • Compact Design: Enables smaller and more efficient electronic devices.
  • Reliable Operation: Provides stable and reliable performance in various conditions.
  • Improved Thermal Performance: Efficient heat dissipation due to low on-resistance.
  • Reduced System Cost: Cost-effective solution for power switching applications.

Additional Details

The UTT108N03L-TA3-T features a drain-source voltage (VDS) rating of typically 30V and a continuous drain current (ID) rating of several amperes, making it suitable for a wide range of low-voltage applications. The low on-resistance (RDS(on)) minimizes conduction losses, contributing to higher efficiency. The fast switching speed and low gate charge (Qg) reduce switching losses, further enhancing the overall efficiency of the power circuit. It is typically packaged in a surface-mount package, such as a TO-252 or similar, allowing for high-density circuit board designs. The MOSFET is designed to operate over a wide range of temperatures, ensuring stable performance in various environmental conditions. The UTT108N03L-TA3-T is commonly used in portable devices, such as laptops and smartphones, as well as in industrial and automotive applications where efficient power switching is critical. This MOSFET conforms to industry standards for environmental safety and reliability, making it a trusted component for ensuring efficient and reliable power management. Its robust construction and consistent performance make it a reliable choice for demanding applications. Furthermore, the UTT108N03L-TA3-T is designed for ease of integration into automated assembly processes, reducing manufacturing costs and improving overall production efficiency.

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