The UT3458G-AG6-R is an N-Channel enhancement mode MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for power switching applications, offering a combination of low on-resistance and fast switching speed. This MOSFET is often used in DC-DC converters, load switching, and power management circuits.

Applications:

• DC-DC Converters
• Load Switching
• Power Management Circuits
• Motor Control
• LED Lighting

Features:

• N-Channel Enhancement Mode
• Low On-Resistance: Minimizes conduction losses.
• Fast Switching Speed: Reduces switching losses.
• Logic Level Gate Drive: Compatible with low voltage logic circuits.
• RoHS Compliant: Environmentally friendly.

Benefits:

• High Efficiency: Low on-resistance and fast switching speed minimize power dissipation.
• Improved Performance: Fast switching enhances system responsiveness.
• Simplified Design: Logic level gate drive simplifies the interface with control circuits.
• Reliable Operation: Designed for stable and reliable performance.
• Compact Footprint: Suitable for space-constrained applications.

Additional Details:

The UT3458G-AG6-R is available in a SOT-363 package, making it suitable for surface mount assembly. The device has a drain-source voltage (VDS) rating of 30V, a gate-source voltage (VGS) rating of ±20V, and a continuous drain current (ID) of 6.5A. The typical on-resistance (RDS(on)) is 15 mΩ at VGS = 10V and 22 mΩ at VGS = 4.5V. The gate threshold voltage typically ranges between 1V and 3V. The fast switching speed is achieved through a low gate charge. It is well-suited for applications requiring high efficiency and power density. The device's thermal resistance is optimized to facilitate efficient heat dissipation, ensuring stable operation even under high load conditions. The part is commonly used in synchronous rectification and high-frequency switching circuits.