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TK370A60F,S4X(S

Part No TK370A60F,S4X(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH  /  N-Channel 600 V 15A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 370mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 300 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TK370A60F,S4X(S-ND,264-TK370A60F,S4X(S,264-TK370A60FS4X(S
Standard Package 1
Win Source Part Number 1020722-TK370A60F,S4X(S
Ultra Librarian 3D Model Ultra Librarian TK370A60F,S4X(S CAD Model

Description

The 1020722-TK370A60F,S4X(S is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 600 V
  • Current: 15A (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Package: TO-220-3 Full Pack
  • Temperature: Up to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4079 $63.3555
100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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