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SSM3J15FV(TL3,T)

Part No SSM3J15FV(TL3,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 960850-SSM3J15FV(TL3,T)
Categories OEM Parts( S )
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSM3J15FV(TL3,T) CAD Model

Description

The SSM3J15FV(TL3,T) is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It's designed for load switching and power management in portable devices and other low-voltage applications. This MOSFET offers low on-resistance and fast switching speeds, contributing to efficient and reliable operation.

Applications:

  • Load Switching: Controlling power to various components in portable devices such as smartphones and tablets.
  • Power Management Circuits: Regulating voltage and current in power supplies and battery chargers.
  • DC-DC Converters: Implementing switching functions in DC-DC converters.
  • Portable Audio Devices: Switching audio signals in amplifiers and other audio circuits.
  • Wearable Electronics: Powering sensors and other components in smartwatches and fitness trackers.

Features:

  • Low On-Resistance: Minimizes power loss and heat generation, improving efficiency.
  • Fast Switching Speed: Enables efficient switching in high-frequency applications.
  • Low Voltage Operation: Designed for low-voltage applications, such as those powered by batteries.
  • Small Package: Available in a small surface-mount package for space-constrained applications.
  • RoHS Compliant: Compliant with RoHS environmental standards.

Benefits:

  • Improved Efficiency: Low on-resistance and fast switching speed improve overall circuit efficiency.
  • Reduced Heat Dissipation: Minimizes heat generation, improving system reliability.
  • Extended Battery Life: Low power loss extends battery life in portable devices.
  • Smaller Footprint: Compact package allows for more compact circuit designs.
  • Easy Assembly: Designed for automated assembly, reducing manufacturing costs.

The SSM3J15FV(TL3,T) has specific electrical characteristics, including a drain-source voltage (Vds) rating (e.g., -20V), a gate-source voltage (Vgs) rating (e.g., ±8V), a drain current (Id) rating (e.g., -3A), and an on-resistance (Rds(on)) value (e.g., 0.068Ω at Vgs=-4.5V). It is typically packaged in a small SOT-23F package. The MOSFET requires a gate drive voltage to switch on and off. The datasheet provides detailed electrical characteristics, application notes, and package dimensions to ensure proper usage and optimal performance. It's crucial to refer to the Toshiba Semiconductor and Storage datasheet for comprehensive information and application guidelines.

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