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GT30J122A(STA1ED

Part No GT30J122A(STA1ED
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (F - I)
Description Low Saturation Voltage
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 967505-GT30J122A(STA1ED
Categories OEM Parts(F-I)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian GT30J122A(STA1ED CAD Model

Description

The GT30J122A(STA1ED is an insulated gate bipolar transistor (IGBT) manufactured by Toshiba Semiconductor and Storage. IGBTs combine the characteristics of MOSFETs and bipolar junction transistors (BJTs), offering high input impedance and high current-carrying capabilities. They are commonly used in high-voltage and high-current switching applications.

Applications

  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power, commonly found in solar inverters and UPS systems.
  • Motor Drives: Employed in motor drive circuits for controlling the speed and torque of electric motors in industrial equipment and electric vehicles.
  • Power Factor Correction (PFC) Circuits: Used in PFC circuits to improve the power factor of electronic devices and reduce harmonic distortion.
  • Welding Machines: Found in welding machines to control the current and voltage during the welding process.
  • Induction Heating: Used in induction heating systems for heating metals and other materials.

Features

  • High Voltage Capability: Capable of withstanding high voltages, typically in the range of several hundred volts.
  • High Current Capability: Can handle high current levels, making it suitable for high-power applications.
  • Low Saturation Voltage: Exhibits a low saturation voltage, reducing power dissipation and improving efficiency.
  • Fast Switching Speed: Offers fast switching speeds, enabling high-frequency operation in switching circuits.
  • Easy Gate Drive: Can be easily driven with a simple gate drive circuit, similar to MOSFETs.
  • Isolated Gate: Features an isolated gate, providing isolation between the control circuit and the power circuit.

Benefits

  • Efficient Switching: Combines high voltage and current capabilities with fast switching speeds, resulting in efficient switching performance.
  • Reduced Power Dissipation: Low saturation voltage minimizes power dissipation, improving overall system efficiency.
  • Simplified Gate Drive: Easy gate drive requirements simplify circuit design and reduce component count.
  • Robust Performance: IGBTs are known for their robust performance and ability to withstand harsh operating conditions.
  • Versatile Applications: Suitable for a wide range of high-power switching applications, including inverters, motor drives, and power supplies.

Additional Details

The GT30J122A(STA1ED IGBT is typically packaged in a TO-220 or similar package. It is important to provide adequate heat sinking to dissipate heat generated during operation. The specific voltage and current ratings, as well as the switching characteristics, should be verified from the manufacturer's datasheet to ensure suitability for the intended application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3854 $55.4160
90+ $1.1368 $102.3120
140+ $1.1013 $154.1820
190+ $1.0657 $202.4830
245+ $1.0302 $252.3990
325+ $0.9236 $300.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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