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2SK2615(TE12L)

Part No 2SK2615(TE12L)
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159552-2SK2615(TE12L)
Popularity Low
Supply and Demand Status Limited
Family Name 2SK2615
Introduction Date December 18, 1996
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2615(TE12L) CAD Model

Description

The 2SK2615(TE12L) is a specialized variant of the standard 2SK2615 MOSFET, tailored to provide enhanced capabilities for targeted applications. Its innovative design focuses on increasing power efficiency and flexibility in electronic circuit solutions.

Features and Benefits:

  • Superior Performance: Delivers superior electrical performance, ensuring smooth operation in high-intensity environments.
  • Advanced Thermal Management: Features improved thermal management, allowing for stable operations even at elevated temperatures.
  • Flexibility: Offers flexibility in design, supporting a wide array of electronic architectures.
  • High Drain Current: Supports high drain current capabilities, suitable for demanding circuit applications.

Applications:

  • Custom Circuit Designs
  • Robotic Systems
  • High-frequency Power Supplies
  • Advanced Computing Equipment
  • Energy Storage Systems

Additional Details: The 2SK2615(TE12L) is engineered for high reliability and adaptability, promising excellent performance in tailored electronic designs. This MOSFET is ideal for engineers and designers aiming to push the boundaries of modern electronics. To ensure optimal use, carefully adhere to its specified electrical and thermal parameters within your project to optimize both performance and lifespan.

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