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Same model may have multiple batches, images only for reference.
HERF1008G Real Image
Same model may have multiple batches, images only for reference.

HERF1008G

Part No HERF1008G
Manufacturer Taiwan Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY GP 10A ITO-220AB / Diode Array 1 Pair Common Cathode Standard 10A Through Hole TO-220-3 Full Pack, Isolated Tab
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr Taiwan Semiconductor Corporation
Package Tube
Diode Configuration 1 Pair Common Cathode
Diode Type Standard
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220AB
Base Product Number HERF1008
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names HERF1008GC0G,HERF1008G C0G-ND,1801-HERF1008GC0G,HERF1008GC0G-ND,HERF1008G C0G,1801-HERF1008G
Standard Package 1,000
Win Source Part Number 1062507-HERF1008G
Ultra Librarian 3D Model Ultra Librarian HERF1008G CAD Model

Description

The Taiwan Semiconductor HERF1008G is a fast recovery diode array with a voltage rating of 1000V and an average rectified current of 10A per diode.

  • Diode Configuration: 1 pair common cathode
  • Mounting: Through hole
  • Reverse Recovery Time: 80ns
  • Current Reverse Leakage: 10 μA @ 1000V
  • Voltage Forward: 1.7V @ 10A
  • Operating Temperature: -55°C to 150°C
  • ECCN: EAR99
  • HTSUS: 8541.10.0080

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