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SPP9547S8RGB

Part No SPP9547S8RGB
Manufacturer SYNC POWER Crop
Catalog Electronic Wholesale
Description P-Channel Enhancement Mode MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer SYNC POWER Crop
Win Source Part Number 1258148-SPP9547S8RGB
Manufacturer Homepage www.syncpower.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP9547S8RGB CAD Model

Description

The SPP9547S8RGB is a P-Channel enhancement mode MOSFET from SYNC POWER Crop. This MOSFET is designed for power switching and load switching applications. Its key features include a low on-resistance, fast switching speed, and robust design, making it suitable for a wide range of power management and control applications.

Applications

  • Load Switching
  • Power Management in Portable Devices
  • Battery Protection Circuits
  • DC-DC Converters
  • Motor Control Applications

Features

  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Logic Level Gate Drive
  • RoHS Compliant
  • Surface Mount Package (SOP-8)

Benefits

  • Improved Power Efficiency
  • Reduced Power Loss and Heat Dissipation
  • Simplified Gate Drive Circuitry
  • Environmentally Friendly
  • Compact Design

Technical Specifications

The SPP9547S8RGB features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -7.5A. The on-resistance (RDS(on)) is typically 20 mΩ at a gate-source voltage (VGS) of -10V. The gate threshold voltage (VGS(th)) is typically between -1V and -3V. The device comes in a SOP-8 package. The maximum power dissipation (PD) is 2.5W. The operating junction temperature ranges from -55°C to +150°C. It features a low gate charge for efficient switching. The input capacitance is typically 900 pF, and the reverse transfer capacitance is typically 200 pF.

The low on-resistance of the SPP9547S8RGB minimizes conduction losses, which improves power efficiency and reduces heat dissipation in the application. The fast switching speed allows for high-frequency operation, further enhancing efficiency. The logic-level gate drive simplifies the gate drive circuitry, reducing component count and cost. The device is RoHS compliant, making it environmentally friendly. Its SOP-8 surface mount package enables compact designs. The P-channel configuration is suitable for high-side switching applications. It is well-suited for power management in portable devices, battery protection circuits, and DC-DC converters. Its robust design ensures reliable performance in demanding applications. This MOSFET provides a combination of efficiency, performance, and reliability, making it an excellent choice for various power switching needs.

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