The TN0620N3 is a N-Channel enhancement-mode vertical DMOS FET manufactured by Supertex, Inc. This transistor is designed for high-voltage, high-speed switching applications. Its vertical DMOS structure allows for efficient current handling and fast switching times.

Applications:

• Solid-state relays
• High-voltage pulse generators
• LED lighting systems
• DC-DC converters
• Power inverters

Features:

• High voltage operation (200V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche energy rated
• Simple drive requirements

Benefits:

• Efficient power switching
• Reduced power dissipation
• Improved system reliability
• Simplified gate drive circuitry
• Compact design

Additional Details:

The TN0620N3 features a low gate charge and gate resistance, enabling fast switching performance with minimal drive power. Its avalanche energy rating ensures ruggedness and reliability in demanding applications. The device is typically supplied in a TO-252 package, which provides good thermal dissipation characteristics. The drain-source breakdown voltage is rated at 200V, making it suitable for applications involving higher voltage levels. The low on-resistance minimizes conduction losses, leading to improved efficiency. The gate-source threshold voltage is typically between 2V and 4V, simplifying the drive requirements. The device is lead-free and RoHS compliant. It is suitable for use in a wide range of applications, including those requiring high-voltage switching and power conversion. The fast switching speed and low on-resistance contribute to overall system efficiency and performance. Its robust design ensures reliable operation in harsh environments.