The STW36N55M5 is a high-performance N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This MOSFET is part of the MDmesh™ M5 series, which is well-known for its excellent energy efficiency and reduced on-state resistance (R_DS(on)).

With a drain-source voltage (V_DS) of 550V, the STW36N55M5 is capable of handling high voltage applications with ease. It is designed to deliver a continuous drain current (I_D) of 23A, making it suitable for a wide range of power applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters.

The device features a low gate charge (Q_g), which enhances the switching performance and makes it ideal for high-frequency applications. With its low threshold voltage, the STW36N55M5 ensures a fast and efficient switching response, which is crucial for reducing energy losses during power conversion.

STMicroelectronics has engineered the STW36N55M5 with state-of-the-art technology, which includes a robust and reliable package design. The MOSFET is encapsulated in a TO-247 long leads package, providing excellent thermal and electrical performance, as well as ease of installation in various circuit configurations.

Key features of the STW36N55M5 include:

• High voltage capability: 550V V_DS
• High current rating: 23A I_D
• Low on-state resistance: R_DS(on)
• Reduced gate charge and low threshold voltage for fast switching
• TO-247 long leads package for superior heat dissipation

Whether you are designing an advanced power supply unit or looking to improve the efficiency of existing applications, the STW36N55M5 offers the performance, reliability, and quality that professionals expect from STMicroelectronics products. Its combination of high voltage capacity, low on-resistance, and fast switching makes it a top choice for engineers and designers seeking to optimize their power management solutions.