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STW33N60M6

Part No STW33N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO247 / N-Channel 600 V 25A (Tj) Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tj)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW33
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1138-STW33N60M6,497-18252
Standard Package 600
Win Source Part Number 1005480-STW33N60M6
Ultra Librarian 3D Model Ultra Librarian STW33N60M6 CAD Model

Description

STW33N60M6 - High Performance N-Channel Power MOSFET by STMicroelectronics

The STW33N60M6 is a state-of-the-art N-channel MDmesh™ M6 power MOSFET presented by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is designed using an advanced proprietary technology that results in reduced on-resistance, minimal switching losses, and exceptional thermal performance. The device is particularly suitable for high-efficiency applications, such as switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other energy-conscious sectors.

With a drain-source voltage (VDS) of 600V, the STW33N60M6 can handle high voltage operations while maintaining robustness and reliability. The continuous drain current (ID) rating at 25°C is 33A, which ensures that the MOSFET can support significant power levels. The device's low gate charge (Qg) and reduced threshold voltage (Vth) contribute to its high switching performance and ease of drive.

One of the key features of the STW33N60M6 is its MDmesh™ M6 technology, which optimizes the device's RDS(on) area. This innovation leads to an outstanding figure of merit, ensuring efficient power handling capabilities while minimizing conduction losses. The MOSFET also boasts a very low intrinsic capacitance, which translates into faster switching speeds, hence enabling high-frequency operation and further improving the overall efficiency of the power conversion system.

The package of the STW33N60M6 is designed to facilitate easy mounting and heat dissipation. The TO-247 long leads package helps in thermal management and is compatible with a wide range of heatsinking strategies. This makes the STW33N60M6 a versatile choice for engineers looking to design systems that require robust thermal performance without compromising on power density.

STMicroelectronics provides comprehensive technical support for the STW33N60M6, including detailed datasheets, application notes, and simulation models. This ensures that designers can fully leverage the capabilities of this high-performance MOSFET in their applications. The combination of high voltage capability, efficiency, and thermal performance makes the STW33N60M6 an excellent choice for power applications demanding the highest levels of reliability and efficiency.

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