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STS1HNC60

Part No STS1HNC60
Manufacturer STMicroelectronics
Catalog Electronic Wholesale
Description N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh™II MOSFET
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Manufacturer STMicroelectronics
Win Source Part Number 1261996-STS1HNC60
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STS1HNC60 CAD Model

Description

The STS1HNC60 is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This MOSFET is part of STMicroelectronics' STripFET™ series, which is renowned for its low on-resistance and minimal gate charge. The device is designed to deliver the efficiency and reliability required for modern high-density power applications.

Key Features

  • Voltage Rating: The STS1HNC60 is capable of handling continuous drain-source voltages up to 600V, making it suitable for high-voltage applications.
  • Current Capacity: This MOSFET can support a continuous drain current of up to 1A, ensuring robust performance for a wide range of power requirements.
  • Low RDS(on): With an on-resistance as low as 1.7 Ohm, the STS1HNC60 provides efficient power conversion, which can lead to energy savings and reduced heat generation.
  • Fast Switching Speed: The device features a fast switching speed, which is essential for reducing switching losses and improving overall efficiency in power converters and inverters.
  • TO-220 Package: Housed in a TO-220 package, the STS1HNC60 offers a balance of good thermal performance and compactness, making it suitable for a variety of PCB layouts.

Applications

The STS1HNC60 is designed for use in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • Motor control circuits
  • LED lighting solutions
  • Power management systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STS1HNC60 is no exception, and it is manufactured to meet the highest industry standards for performance and reliability. With its robust design and advanced manufacturing process, this MOSFET ensures long-term stability and consistent operation even in demanding conditions.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to consult the official datasheet and product documentation available on the STMicroelectronics website.

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