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STP5NB90

Part No STP5NB90
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194620-STP5NB90
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP5NB90 CAD Model

Description

STP5NB90 - Power MOSFET by STMicroelectronics

The STP5NB90 from STMicroelectronics is a robust and reliable power MOSFET designed to deliver high performance in a wide range of applications. This particular MOSFET features a high breakdown voltage of 900V, making it suitable for high voltage applications. It is part of the N-channel standard series, which is known for its efficiency and low power consumption.

With a continuous drain current of 5A, the STP5NB90 is capable of handling significant power for its size. The device is designed using STMicroelectronics' advanced MDmesh™ technology which combines a vertical structure with the company's proprietary strip layout to yield one of the world's lowest on-resistance and gate charge. These features make it an excellent choice for high-efficiency converters and power management tasks.

The STP5NB90 also boasts a low threshold drive, which means it can be turned on with a lower gate voltage, reducing the power needed to control the MOSFET and thus enhancing the overall efficiency of the system. Its dynamic dv/dt rating and fast switching speed further contribute to its effectiveness in high-performance environments.

From a design perspective, the STP5NB90 is available in a TO-220 package, which is widely used and recognized for its good thermal performance and ease of mounting on a printed circuit board. This package makes it suitable for various applications, including switch-mode power supplies (SMPS), lighting ballasts, welding equipment, and other high-voltage switching applications.

For protection and reliability, the STP5NB90 incorporates an avalanche ruggedness feature, which ensures the device can handle high energy pulses in the case of unclamped inductive loads. Moreover, the 100% avalanche tested MOSFET guarantees safe operating conditions under extreme scenarios.

Overall, the STP5NB90 from STMicroelectronics is engineered to meet the needs of modern high-voltage applications where efficiency, reliability, and power density are critical. With its advanced technology and robust design, it continues to be a preferred choice for designers and engineers looking to optimize their power management systems.

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