The STP160N4LF6 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the industry leaders in semiconductor technology. This MOSFET is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, which ensures optimized performance in terms of both on-state resistance and switching losses, making it suitable for a variety of power applications.

Key Features

• Low On-Resistance: The STP160N4LF6 boasts an exceptionally low on-resistance (R_DS(on)), which results in reduced conduction losses and improved overall efficiency in applications.
• High Current Capability: With a continuous drain current (I_D) of up to 120A, this MOSFET can handle high current loads, making it ideal for demanding power applications.
• High Voltage Rating: The device has a drain-source voltage (V_DSS) of 40V, providing a good safety margin for applications with high voltage requirements.
• Low Gate Charge: The low gate charge (Q_g) of the STP160N4LF6 facilitates faster switching, which is crucial for high-efficiency power conversion.
• Enhanced Thermal Performance: Thanks to its advanced package design, the MOSFET offers excellent thermal performance, ensuring reliability even under high temperature operating conditions.

Applications

The STP160N4LF6 is designed to meet the requirements of a broad range of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Control Circuits
• Automotive Applications
• Power Management Solutions

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STP160N4LF6 is no exception, with its robust design and manufacturing process ensuring consistent performance and longevity in the field.

Environmental Compliance

The STP160N4LF6 complies with various environmental standards, including RoHS and Halogen-free requirements, reflecting STMicroelectronics' dedication to environmental sustainability.